|
|
Numéro de référence | STM101N | ||
Description | N-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | SamHop Microelectronics | ||
Logo | |||
Green
Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
STM101N
Ver1.0
PRODUCT SUMMARY
VDSS ID RDS(ON) (mΩ) Typ
100V
3A
170 @ VGS=10V
260 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
S O-8
1
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TA=25°C
TA=70°C
IDM -Pulsed b
EAS Sigle Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
100
±20
3
2.4
15
2.3
2.8
1.8
-55 to 150
44
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Oct,08,2010
www.samhop.com.tw
|
|||
Pages | Pages 7 | ||
Télécharger | [ STM101N ] |
No | Description détaillée | Fabricant |
STM101N | N-Channel Enhancement Mode Field Effect Transistor | SamHop Microelectronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |