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PDF STM6610 Data sheet ( Hoja de datos )
| Número de pieza | STM6610 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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S T M6610Green
Product
S amHop Microelectronics C orp.
Dec. 11 2006
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S ID R DS (ON) ( m Ω ) Max
30V 8.5A
19 @ VGS = 10V
28 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
E S D P rotected.
D1 D1 D2 D2
8765
S O-8
1
1234
S1 G1 S2 G2
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
G ate-S ource Voltage
a
Drain C urrent-C ontinuous @ T a
-P uls ed b
25 C
70 C
S ymbol
VDS
VGS
ID
IDM
N-Channel
30
20
8.5
6.5
40
Unit
V
V
A
A
A
Drain-S ource Diode F orward C urrent a
IS
1.7
A
Maximum P ower Dissipation a
Operating J unction and S torage
Temperature R ange
Ta= 25 C
T a=70 C
PD
TJ, TSTG
2
1.44
-55 to 150
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R JA
62.5
C /W
1
1 page  
S TM6610
900
750
Ciss
600
10
VDS =15V
8 ID=7A
6
450
4
300
Coss 2
150
Crss
60
0 5 10 15 20 25 30
0
0 2 4 6 8 10 12 14 16
VDS, Drain-to Source Voltage (V)
F igure 8. C apacitance
Qg, T otal G ate C harge (nC )
F igure 9. G ate C harge
250
100
60
10
T D(off)
Tr
Tf
T D(on)
50
10 R DS(ON) Limit
1
10ms
100ms
1s
DC
1 V DS =15V ,ID=7A
V G S =10V
1 6 10 60 100 300 600
R g, G ate R es is tance (Ω)
F igure 11.s witching characteris tics
9
0.1
0.03
0.1
VGS =10V
S ingle P ulse
T A=25 C
1
10 30 50
V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
O perating Area
1
0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
P DM
t1
t2
1. R thJA (t)=r (t) * R thJA
2. R thJA=S ee Datas heet
3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
10 100
1000
5
5 Page | ||
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| PDF Descargar | [ Datasheet STM6610.PDF ] | |
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