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STMicroelectronics - P-CHANNEL MOSFET PLUS SCHOTTKY RECTIFIER

Numéro de référence STM2DPFS30L
Description P-CHANNEL MOSFET PLUS SCHOTTKY RECTIFIER
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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STM2DPFS30L fiche technique
® STM2DPFS30L
STripFETP
- CHANNEL 30V - 0.145- 2A MiniS0-8
MOSFET PLUS SCHOTTKY RECTIFIER
PRELIMINARY DATA
MAIN PRODUCT CHARACTERISTICS
MOSFET
V D SS
RDS(on )
30V <0.165
SCHOTTKY
IF (AV)
VRRM
1A 40V
ID
2A
V F(M AX)
0. 5 5V
DESCRIPTION:
This product associates the latest low voltage
St ripFETin p-channel version to a low drop
Schottk y diode. Such configuration is extremely
versatile in implementing a large variety of DC-DC
convert ers for printers, portable equipment, and
cellular phones.
New MiniSO-8 package features:
s Half footprint area versus standard SO-8, for
application where minimum circuit board
space is necessary.
s Extremely low profile, ideal for low thickness
equipment.
MOSFET ABSOLUTE MAXIMUM RATINGS
S ym b o l
P ar ame te r
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gat e Voltage (RGS = 20 k)
VGS
ID
ID
ID M( )
Ptot
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
MiniSO-8
INTERNAL SCHEMATIC DIAGRAM
V alu e
30
30
± 20
2
1.3
8
1.25
Unit
V
V
V
A
A
A
W
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
V R RM
IF(RMS)
IF (AV)
Repetitive Peak Reverse Voltage
RMS Forward Current
Average Forward Current
Ta=60 oC
δ =0.5
IFSM Surge Non Repetit ive Forward Current
tp= 10 ms
Sinusoidal
dv/dt Critical Rate Of Rise Of Reverse Voltage
() Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
July 1999
V alu e
40
2
1.2
5.5
10000
Un it
V
A
A
A
V/µs
1/6

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