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STT3402N fiches techniques PDF

SeCoS - N-Channel Enhancement Mode Mos.FET

Numéro de référence STT3402N
Description N-Channel Enhancement Mode Mos.FET
Fabricant SeCoS 
Logo SeCoS 





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STT3402N fiche technique
Elektronische Bauelemente
STT3402N
6.3 A, 30 V, RDS(ON) 27 m
N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize High Cell Density
process. Low RDS(on) assures minimal power loss and conserves energy,
making this device ideal for use in power management circuitry. Typical
applications are power switch, power management in portable and
battery-powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
TSOP-6
A
E
L
654
B
TYPICAL APPLICATIONS
Low RDS(on) Provides Higher Efficiency and
Extends Battery Life.
Low Gate Charge.
Fast Switch.
Miniature TSOP-6 Surface Mount Package
Saves Board Space.
PRODUCT SUMMARY
STT3402N
VDS(V)
30
RDS(on) (m
0.027@VGS= 10V
0.035@VGS= 4.5V
ID(A)
6.3
5.5
PACKAGE INFORMATION
Package
MPQ
TSOP-6
3K
LeaderSize
7’ inch
123
F
DG
K
C
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
DD
DD
GS
ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
Operating Junction and Storage Temperature Range
TA= 25°C
TA= 70°C
TA= 25°C
TA= 70°C
Symbol
VDS
VGS
ID
IDM
IS
PD
Tj, Tstg
Ratings
Maximum
30
±20
6.3
5.2
±20
1.3
1.6
1.0
-55 ~ 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient 1
Notes
t 5 sec
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
Symbol
RJA
Maximum
78
Unit
V
V
A
A
A
W
°C
Unit
°C / W
http://www.SeCoSGmbH.com/
19-Nov-2010 Rev. A
Any changes of specification will not be informed individually.
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