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STT3457P fiches techniques PDF

SeCoS - P-Channel Enhancement Mode Mos.FET

Numéro de référence STT3457P
Description P-Channel Enhancement Mode Mos.FET
Fabricant SeCoS 
Logo SeCoS 





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STT3457P fiche technique
Elektronische Bauelemente
STT3457P
-4 A, -30 V, RDS(ON) 60 m
P-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize
a high cell density trench process to provide Low RDS(on)
and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power
management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and
cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe TSOP-6
saves board space.
Fast switching speed
High performance trench technology
PACKAGE INFORMATION
Package
MPQ
TSOP-6
3K
LeaderSize
7’ inch
TSOP-6
A
E
L
654
B
123
F
DG
K
C
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
DD
DD
GS
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
TA= 25°C
TA= 70°C
Power Dissipation 1
TA= 25°C
TA= 70°C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
Tj, Tstg
Thermal Resistance Ratings
Maximum Junction to Ambient 1
t 5 sec
Steady State
RJA
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
Ratings
-30
±20
-4
-3.2
-20
-1.7
2
1.3
-55 ~ 150
62.5
110
Unit
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
06-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
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