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PDF STM8820 Data sheet ( Hoja de datos )
| Número de pieza | STM8820 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STM8820 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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r
Pr
STM8820
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m ) Max
587 @ VGS=10V
80V 1.4A
756 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
S O-8
1
D2 5
D2 6
D1 7
D1 8
4 G2
3 S2
2 G1
1 S1
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TC=25°C
TC=70°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
80
±20
1.4
1.1
5
5.5
2
1.28
-55 to 150
62.5
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Apr,16,2012
www.samhop.com.tw
1 page  
STM8820
V DS
L
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VDD
Unclamped Inductive Test Circuit
F igure 13a.
Ver 1.0
V( BR )D S S
tp
IAS
Unclamped Inductive Waveforms
F igure 13b.
10
1 0.5
0.2
0.1
0.05
0.1
0.02
0.01
0.01
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
P DM
t1
t2
1. R ӰJA (t)=r (t) * R ӰJA
2. R ӰJA=S ee Datas heet
3. T J M-T A = P DM* R ӰJ A (t)
4. Duty C ycle, D=t1/t2
10 100 1000
Apr,16,2012
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet STM8820.PDF ] | |
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