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PDF STT6602 Data sheet ( Hoja de datos )
| Número de pieza | STT6602 | |
| Descripción | N & P-Channel Enhancement Mode Mos.FET | |
| Fabricantes | SeCoS | |
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Hay una vista previa y un enlace de descarga de STT6602 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Elektronische Bauelemente
STT6602
N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ
P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ
N & P-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The STT6602 uses advanced trench technology to
provide excellent on-resistance and low gate charge.
The complementary MOSFETs form a high-speed
power inverter, suitable for a multitude of applications.
The TSOP-6 package is universally used for all
commercial-industrial surface mount applications.
FEATURES
Low Gate Change
Low On-resistance
MARKING
6602
Date Code
PACKAGE INFORMATION
Package
MPQ
TSOP-6
3K
Leader Size
7 inch
TSOP-6
A
E
L
654
B
123
F
DG
K
C
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
N-Channel
P-Channel
Drain-Source Voltage
VDS 30 -30
Gate-Source Voltage
Continuous Drain Current 2
Pulsed Drain Current 1
Power Dissipation @TA=25°C
Linear Derating Factor
TA=25°C
TA=70°C
VGS
ID
IDM
PD
±20 ±20
3.3 -2.3
2.6 -1.8
10 -10
1.14
0.01
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~150
Thermal Resistance Rating
Maximum Junction to Ambient 2
RθJA
110
Notes:
1. Pulse width limited by Max. junction temperature.
2. Surface mounted on 1 in2 copper pad of FR4 board, t≦5sec; 180°C / W when mounted on Min. copper pad.
Unit
V
V
A
A
W
W / °C
°C
°C / W
http://www.SeCoSGmbH.com/
15-Aug-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 7
1 page  
Elektronische Bauelemente
CHARACTERISTIC CURVES (N-Channel)
STT6602
N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ
P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ
N & P-Channel Enhancement Mode Mos.FET
http://www.SeCoSGmbH.com/
15-Aug-2011 Rev. A
Any changes of specification will not be informed individually.
Page 5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet STT6602.PDF ] | |
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