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Numéro de référence | STT6603 | ||
Description | P-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | SamHop Microelectronics | ||
Logo | |||
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
STT6603
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
-60V
-2.5A
180 @ VGS=-10V
240 @ VGS=-4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
SOT-223 package.
G
S
SOT - 223
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
IDM -Pulsed b
TA=25°C
TA=70°C
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
-60
±20
-2.5
-2.0
-20
2.08
1.33
-55 to 150
60
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Nov,17,2008
www.samhop.com.tw
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Pages | Pages 7 | ||
Télécharger | [ STT6603 ] |
No | Description détaillée | Fabricant |
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