DataSheetWiki


STT6603 fiches techniques PDF

SamHop Microelectronics - P-Channel Enhancement Mode Field Effect Transistor

Numéro de référence STT6603
Description P-Channel Enhancement Mode Field Effect Transistor
Fabricant SamHop Microelectronics 
Logo SamHop Microelectronics 





1 Page

No Preview Available !





STT6603 fiche technique
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
STT6603
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m) Max
-60V
-2.5A
180 @ VGS=-10V
240 @ VGS=-4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
SOT-223 package.
G
S
SOT - 223
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
IDM -Pulsed b
TA=25°C
TA=70°C
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
-60
±20
-2.5
-2.0
-20
2.08
1.33
-55 to 150
60
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Nov,17,2008
www.samhop.com.tw

PagesPages 7
Télécharger [ STT6603 ]


Fiche technique recommandé

No Description détaillée Fabricant
STT6601 N & P-Channel Enhancement Mode Mos.FET SeCoS
SeCoS
STT6602 N & P-Channel Enhancement Mode Mos.FET SeCoS
SeCoS
STT6603 P-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics
SamHop Microelectronics

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche