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SamHop Microelectronics - N-Channel Enhancement Mode Field Effect Transistor

Numéro de référence SDT01N02
Description N-Channel Enhancement Mode Field Effect Transistor
Fabricant SamHop Microelectronics 
Logo SamHop Microelectronics 





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SDT01N02 fiche technique
SDT01N02Green
Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (Ω) Typ
200V
1.5A
3.5 @ VGS=10V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
D
G
S
SOT-223
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous
TA=25°C
IDM -Pulsed a
PD
Maximum Power Dissipation a
TA=25°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit
200
±30
1.5
6
2.98
-55 to 150
42
Units
V
V
A
A
W
°C
°C/W
Details are subject to change without notice.
1
Jun,07,2012
www.samhop.com.tw

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