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PDF STK400 Data sheet ( Hoja de datos )

Número de pieza STK400
Descripción N-Channel Enhancement Mode Field Effect Transistor
Fabricantes SamHop Microelectronics 
Logotipo SamHop Microelectronics Logotipo



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No Preview Available ! STK400 Hoja de datos, Descripción, Manual

Gre
Pro
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
STK400
Ver 1.0
PRODUCT SUMMARY
VDSS ID RDS(ON) (mΩ) Max
390 @ VGS=10V
40V 1.3A
550 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
D
SOT-89
S
D
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TA=25°C
TA=70°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit
40
±20
1.3
1.0
5.2
0.25
1.25
0.8
-55 to 150
100
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Jan,12,2011
www.samhop.com.tw

1 page




STK400 pdf
STK400
Ver 1.0
V DS
L
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VDD
Unclamped Inductive Test Circuit
Figure 13a.
V(BR )DS S
tp
IAS
Unclamped Inductive Waveforms
Figure 13b.
100
10-1
10-2
D=0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
10-3
10-4
10-3
10-2
10-1
PDM
t1
t2
1. R’JA (t)=r (t) * R’JA
2. R’JA=See Datasheet
3. TJM-TA = P* R’JA (t)
4. Duty Cycle, D=t1/t2
100 101 102
Square Wave Pulse Duration (msec)
Figure 14. Normalized Thermal Transient Impedance Curve
Jan,12,2011
5 www.samhop.com.tw

5 Page










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