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STS6N20 fiches techniques PDF

SamHop Microelectronics - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Numéro de référence STS6N20
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Fabricant SamHop Microelectronics 
Logo SamHop Microelectronics 





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STS6N20 fiche technique
Gr
Pr
STS6N20
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Max
1.05 @ VGS=10V
60V 0.8A
1.30 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Surface Mount Package.
S OT23
D
S
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
IDM -Pulsed b
TA=25°C
TA=70°C
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
60
±20
0.8
0.64
3
1.25
0.8
-55 to 150
100
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Jun,26,2012
www.samhop.com.tw

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