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PDF STS8216 Data sheet ( Hoja de datos )
| Número de pieza | STS8216 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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STS8216Green
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
20 @ VGS=4.0V
20V 6A
27 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
S1
D1/D2
S2
SOT 26
Top View
16
25
34
G1
D1/D2
G2
D1
G1 G2
S1
D2
S2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
IDM -Pulsed b
TA=25°C
TA=70°C
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
20
±10
6
4.8
24
1.25
0.8
-55 to 150
100
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Sep,11,2009
www.samhop.com.tw
1 page  
STS8216
Ver 1.0
VDD
RL
VIN
D VOUT
VGS
RGEN
G
A
S
Figure 13. Switching Test Circuit
td(on)
VOUT
ton
t r td(off)
90%
10% INVERTED
toff
tf
90%
10%
VIN
10%
90%
50% 50%
PULSE WIDTH
Figure 14. Switching Waveforms
10
1
0.5
0.2
P DM
0.1
0.1
0.05
0.01
0.02
0.01
Single Pulse
t1
t2
1. R thJA (t)=r (t) * R thJA
2. R thJA=S ee Datas heet
3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
0.00001
0.0001
0.001
0.01
0.1
1
10 100 1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
Sep,11,2009
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet STS8216.PDF ] | |
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