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STS2306E fiches techniques PDF

SamHop Microelectronics - N-Channel Enhancement Mode Field Effect Transistor

Numéro de référence STS2306E
Description N-Channel Enhancement Mode Field Effect Transistor
Fabricant SamHop Microelectronics 
Logo SamHop Microelectronics 





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STS2306E fiche technique
S T S 2306EGreen
Product
S amHop Microelectronics C orp.
J an. 10 2008 V er1.0
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S ID R DS (ON) ( m ) Max
20V 6.5A
30 @ VGS = 4.5V
40 @ VGS = 2.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
E S D P rotected.
S OT-23
D
S
G
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS 20
V
Gate-S ource Voltage
VGS 10 V
Drain C urrent-C ontinuous a @ TJ=25 C
ID
6.5
A
-P ulsed b
IDM 24 A
Drain-S ource Diode Forward C urrent a
IS
1.25 A
Maximum P ower Dissipation a
PD 1.25 W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R JA
100
C /W
1

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