(PDF) BSM10GD120DN2E3224 Datasheet

Número de pieza	BSM10GD120DN2E3224
Descripción	IGBT Power Module
Fabricantes	eupec
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No Preview Available ! BSM 10 GD 120 DN2 E3224 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 10 GD 120 DN2 BSM 10 GD120DN2E3224 VCE IC 1200V 15A 1200V 15A Package ECONOPACK 2 ECONOPACK 2K Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 kΩ Gate-emitter voltage DC collector current TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C Power dissipation per IGBT TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol VCE VCGR VGE IC ICpuls Ptot Tj Tstg RthJC RthJCD Vis - - - - Ordering Code C67076-A2513-A67 C67070-A2513-A67 Values 1200 Unit V 1200 ± 20 15 10 A 30 20 80 + 150 -40 ... + 125 W °C ≤ 1.52 ≤2 2500 16 11 F 40 / 125 / 56 K/W Vac mm sec 1 2006-02-01 1 page

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