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Numéro de référence | STB60L60 | ||
Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor | ||
Fabricant | SamHop | ||
Logo | |||
STB/P60L60
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
27 @ VGS=10V
60V 36A
42 @ VGS=4.5V
FEATURES
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
G
S
S TB S E R IE S
T O -263(DD-P AK )
G
D
S
S TP S E R IE S
TO-220
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
Limit
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TC=25°C
TC=70°C
60
±20
36
29
IDM -Pulsed b
106
EAS Avalanche Energy c
113
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
70
45
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.75
62.5
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
Downloaded from Elcodis.com electronic components distributor
1
Sep,17,2008
www.samhop.com.tw
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Pages | Pages 8 | ||
Télécharger | [ STB60L60 ] |
No | Description détaillée | Fabricant |
STB60L60 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | SamHop |
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