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PDF STP656F Data sheet ( Hoja de datos )
| Número de pieza | STP656F | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop | |
| Logotipo |  |
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Gr
Pr
SamHop Microelectronics Corp.
N-Channel Enhancement Mode Field Effect Transistor
STP656F
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m ) Max
19 @ VGS=10V
60V 22A
29 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220F Package.
D
GDS
STF SERIES
TO-220F
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
Limit
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TC=25°C
TC=70°C
60
±20
22
17.7
IDM -Pulsed b
66
EAS Avalanche Energy d
182
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
21
13.3
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case a
Thermal Resistance, Junction-to-Ambient a
6
65
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Dec,01,2010
www.samhop.com.tw
1 page  
STP656F
V DS
L
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VDD
Unclamped Inductive Test Circuit
F igure 13a.
Ver 1.0
V( BR )D S S
tp
IAS
Unclamped Inductive Waveforms
F igure 13b.
2
1
0.1
0.01
0.00001
D=0.5
0.2
0.1
0.05
0.02
0.01
S ingle P uls e
0.0001
0.001
0.01
0.1
S quare Wave P uls e Duration (ms ec)
P DM
t1
t2
1. R JC (t)=r (t) * R JC
2. R JC=S ee Datas heet
3. T JM-T C = P * R JC (t )
4. Duty C ycle, D=t1/t2
1
F igure 14. Normalized T hermal T rans ient Impedance C urve
10
Dec,01,2010
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet STP656F.PDF ] | |
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