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SamHop - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Numéro de référence STP652F
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Fabricant SamHop 
Logo SamHop 





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STP652F fiche technique
STP652FGre
Pro
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.1
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
60V 29A 22 @ VGS=10V
FEATURES
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220F package.
D
GDS
STF SERIES
TO-220F
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
Limit
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TC=25°C
TC=70°C
IDM -Pulsed b
60
±20
29
24
90
EAS Avalanche Energy d
110
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
46
32
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
3.25
62.5
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Oct,27,2010
www.samhop.com.tw

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