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Número de pieza | STP60L60F | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | SamHop | |
Logotipo | ||
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STP60L60F
SamHop Microelectronics Corp.
N-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
60V 32A 15 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220F Package.
D
GDS
STF SERIES
TO-220F
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
Limit
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TC=25°C
TC=70°C
60
±20
32
26.8
IDM -Pulsed b
95
EAS Avalanche Energy d
144
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
30
21
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
5
65
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Oct,13,2011
www.samhop.com.tw
1 page STP60L60F
V DS
L
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VDD
Unclamped Inductive Test Circuit
F igure 13a.
Ver 1.0
V( BR )D S S
tp
IAS
Unclamped Inductive Waveforms
F igure 13b.
2
1
0.1
0.01
0.00001
D=0.5
0.2
0.1
0.05
0.02
0.01
S ingle P uls e
0.0001
0.001
0.01
0.1
S quare Wave P uls e Duration (ms ec)
P DM
t1
t2
1. R JC (t)=r (t) * R JC
2. R JC=S ee Datas heet
3. T JM-T C = P * R JC (t )
4. Duty C ycle, D=t1/t2
1
10
F igure 14. Normalized T hermal T rans ient Impedance C urve
Oct,13,2011
5 www.samhop.com.tw
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet STP60L60F.PDF ] |
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