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Datasheet STS4622-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
STS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | STS-2308-01 | DYNAMIC MICRO SPEAKER Messrs :
SPECIFICATION
ITEM : DYNAMIC MICRO SPEAKER
CUSTOMER’S MODEL :
MODEL NUMBER : SIZE :
STS-2308-01 Ø23 5.0T
DATE OF APPROVAL
2007. 03.09
星 音 電 子
STAR ACOUSTICS CO.
SEOJIN BLDG. 887-10, SHINCHUN-DONG, SHIHEUNG-SI, KYUNG GI-DO.KOREA. TEL : (031)404-4203 FAX : (031)318-8692 E-MA  STAR ACOUSTICS data | | |
| 2 | STS-8857 | Transmissive Switch Assembly
STS-8857
Transmissive Switch Assembly
Features • Non contact switching • Three wires for electrical connection • Fast switching speed Description The STS-8857 consists of an infrared emitting diode and an NPN silicon phototransistor mounted on opposite sides of a 3.8 mm wi  Silonex data | | |
| 3 | STS01DTP06 | Dual NPN-PNP complementary Bipolar transistor
STS01DTP06
Dual NPN-PNP complementary Bipolar transistor
General features
VCE(sat) 0.35V
■ ■ ■ ■
hFE >100
IC 1A
High gain Low VCE(sat) Simplified circuit design Reduced component count SO-8
Applications
■ ■ ■
Push-Pull or Totem-Pole configuration MOSFET and IG  ST Microelectronics transistor | | |
| 4 | STS05DTP03 | Dual NPN-PNP complementary bipolar transistor STS05DTP03
www.datasheet4u.com
Dual NPN-PNP complementary bipolar transistor
Features
■ ■ ■ ■
High gain Low VCE(sat) Simplified circuit design Reduced component count
4 1 5 8
Applications
■ ■ ■
Push-pull or Totem-Pole configuration MOSFET and IGBT gate driving Motor, relay and sol ST Microelectronics transistor | | |
| 5 | STS100 | Multifunction Telecommunications Switch STS100
Multifunction Telecommunications Switch
DESCRIPTION
The STS100 combines two 1 Form A solid state relays and one optocoupler in a 16-pin SOIC package. Its small outline and low height make it ideal for use in PCMCIA applications where multi-function devices help reduce co  Solid State Optronic data | | |
| 6 | STS10DN3LH5 | Power MOSFETs
STS10DN3LH5
Dual N-channel 30 V, 0.019 Ω, 10 A, SO-8 STripFET™ V Power MOSFET
Features
Type STS10DN3LH5
■ ■ ■ ■ ■
VDSS 30 V
RDS(on) max 0.021 Ω
ID 10 A
RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High ava ST Microelectronics mosfet | | |
| 7 | STS10NF30L | N-CHANNEL PowerMESH MOSFET ®
STS10NF30L
N - CHANNEL 30V - 0.011Ω - 10A SO-8 STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE STS10NF30L
s s
V DSS 30 V
R DS( on) < 0.0135 Ω
ID 10 A
s
TYPICAL RDS(on) = 0.011 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE
DESCRIPTION This Power MOSF ST Microelectronics mosfet | |
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