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PDF STS3623 Data sheet ( Hoja de datos )
| Número de pieza | STS3623 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop | |
| Logotipo |  |
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S amHop Microelectronics C orp.
S TS 3623
J un, 09 2006
Dual N-Channel Enhancement Mode Field Effect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m : ) Max
30V 4A
50 @ VGS = 10V
65 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S OT-26 package.
S OT 26
Top View
G1 1 6 D1
S2 2 5 S1
G2 3 4 D2
D1 D2
G1
S1
G2
S2
AB S OL UTE MAXIMUM R ATINGS (TA=25 C unles s otherwis e noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ TJ=25 C
-P ulsed b
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation a
Operating Junction and S torage
Temperature R ange
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
30
20
4
16
1.25
1.25
-55 to 150
Unit
V
V
A
A
A
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R thJA
100
C /W
1
1 page  
S TS 3623
500
400
C is s
300
200
C oss
100
C rss
0
05
10 15 20 25 30
V DS , Drain-to S ource Voltage (V )
F igure 9. C apacitance
100
Tr
10 Tf
1
VDS =15V ,ID=1A
VG S =10V
1 6 10 60 100 300 600
R g, G ate R es is tance (:)
F igure 11.s witching characteris tics
10
VDS =15V
8 ID=3A
6
4
2
0
0123 4 567 8
Qg, T otal G ate C harge (nC )
F igure 10. G ate C harge
50
10 R DS(ON) Limit
11
10ms
100ms
DC 1s
0.1 VGS =10V
S ingle P ulse
0.03 Tc=25 C
0.1 1
10 20 50
V DS , Drain-S ource V oltage (V )
F igure 12. Maximum S afe
O perating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STS3623.PDF ] | |
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