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STS3426 fiches techniques PDF

SamHop - N-Channel Enhancement Mode Field Effect Transistor

Numéro de référence STS3426
Description N-Channel Enhancement Mode Field Effect Transistor
Fabricant SamHop 
Logo SamHop 





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STS3426 fiche technique
Green
Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
STS3426
Ver 1.1
PRODUCT SUMMARY
VDSS
30V
ID
4.2A
RDS(ON) (mΩ) Max
31 @ VGS= 10V
40 @ VGS= 4.5V
52 @ VGS= 2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
SOT 26
Top View
D 16 D
D 25 D
G 34 S
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
IDM -Pulsed b
TA=25°C
TA=70°C
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
30
±12
4.2
3.4
17
1.25
0.8
-55 to 150
100
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Dec,17,2013
www.samhop.com.tw

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