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Numéro de référence | STD12L01A | ||
Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor | ||
Fabricant | SamHop Microelectronics | ||
Logo | |||
Gr
Pr
STD12L01A
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 2.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
140 @ VGS=10V
100V
12A
170 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-251 Package.
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TC=25°C
TC=70°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case a
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
100
±20
12
9.6
35
36
45
29
-55 to 150
2.8
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Oct,15,2010
www.samhop.com.tw
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Pages | Pages 7 | ||
Télécharger | [ STD12L01A ] |
No | Description détaillée | Fabricant |
STD12L01 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | SamHop Microelectronics |
STD12L01A | N-Channel Logic Level Enhancement Mode Field Effect Transistor | SamHop Microelectronics |
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