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PDF STU630S Data sheet ( Hoja de datos )
| Número de pieza | STU630S | |
| Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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STU/D630SGreen
Product
SamHop Microelectronics Corp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
10 @VGS=10V
60V 46A
18 @VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G
S
STU SERIES
TO-252AA(D-PAK)
G
DS
STD SERIES
TO-251(I-PAK)
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
IDM -Pulsed a
TC=25°C
TC=70°C
EAS Single Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
60
±20
46
36.8
134
210
42
27
-55 to 150
3
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Jan,18,2013
www.samhop.com.tw
1 page  
STU/D630S
Ver 1.0
VDS
L
RG
20V
tp
D.U.T
IAS
0.01
+
- VDD
Uncamped Inductive Test Circuit
Figure 13a.
V(BR)DSS
tp
IAS
Unclamped Inductive Waveforms
Figure 13b.
2
1
D=0.5
0.2
0.1
0.1 0.05
0.02
P DM
t1
t2
0.01
1. R JA(t)=r(t)*R JA
2. R JA=See Datasheet
SINGLE PULSE
3. TJM-TA=PDM*R JA(t)
4. Duty Cycle,D=t1/t2
0.01
10-5
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
10
Jan,18,2013
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STU630S.PDF ] | |
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