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SamHop Microelectronics - N-Channel Field Effect Transistor

Numéro de référence SDU02N25
Description N-Channel Field Effect Transistor
Fabricant SamHop Microelectronics 
Logo SamHop Microelectronics 





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SDU02N25 fiche technique
Gre
Pro
SDU/D02N25
Sa mHop Microelectronics C orp.
N-Channel Field Effect Transistor
Ver 1.1
PRODUCT SUMMARY
VDSS
ID RDS(ON) (Ω) Typ
250V 2A 3.2 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
G
S
SDU SERIES
TO - 252AA(D-PAK)
G
DS
SDD SERIES
TO - 251(I-PAK)
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous
TA=25°C
TA=70°C
IDM -Pulsed a
EAS Single Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
250
±30
2
1.5
6
10.4
42
27
-55 to 150
3
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Jun,07,2012
www.samhop.com.tw

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