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SamHop Microelectronics - N-Channel Enhancement Mode Field Effect Transistor

Numéro de référence STP8444
Description N-Channel Enhancement Mode Field Effect Transistor
Fabricant SamHop Microelectronics 
Logo SamHop Microelectronics 





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STP8444 fiche technique
STB/P8444
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m) Max
40V 80A 4.8 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-263 Package.
D
G
S
STB SERIES
TO-263(DD-PAK)
G
D
S
STP SERIES
TO-220
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous a
TC=25°C
IDM -Pulsed b
EAS Sigle Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Limit
40
±20
80
264
306
62
-55 to 150
1.8
62.5
Units
V
V
A
A
mJ
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Mar,26,2008
www.samhop.com.tw

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