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PDF STB31L01 Data sheet ( Hoja de datos )
| Número de pieza | STB31L01 | |
| Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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STB31L01Gre
Pro
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.1
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m ) Typ
100V 26A 49 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-263 Package.
D
G
S
S TB S E R IE S
T O -263(DD-P AK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous
TC=25°C
TC=70°C
IDM -Pulsed a
EAS Single Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
100
±20
26
21.8
76
36
75
52.5
-55 to 175
2
62.5
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Sep,20,2012
www.samhop.com.tw
1 page  
STB31L01
V DS
L
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VDD
Unclamped Inductive Test Circuit
Figure 13a.
Ver 1.1
V( BR )D S S
tp
IAS
Unclamped Inductive Waveforms
Figure 13b.
2
1
D=0.5
0.2
0.1
0.1 0.05
0.02
0.01
S ingle P uls e
0.01
0.00001
0.0001
0.001
0.01
P DM
t1
t2
1. R JC (t)=r (t) * R JC
2. R JC=S ee Datas heet
3. T JM-T C = P * R JC (t )
4. Duty C ycle, D=t1/t2
0.1 1
Square Wave Pulse Duration (msec)
Figure 14. Normalized Thermal Transient Impedance Curve
10
Sep,20,2012
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet STB31L01.PDF ] | |
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