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PDF STF2455 Data sheet ( Hoja de datos )
| Número de pieza | STF2455 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STF2455 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Green
Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
STF2455
Ver 1.0
PRODUCT SUMMARY
VDSS
24V
ID RDS(ON) (mΩ) Max
6.2 @ VGS=4.5V
6.3 @ VGS=4.0V
13A 6.5 @ VGS=3.7V
7.0 @ VGS=3.1V
8.5 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
PIN 1
G
S
S
D
D
D
TDFN 2X3
(Bottom view)
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
IDM -Pulsed b
TA=25°C
TA=70°C
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
24
±12
13
10.4
80
1.8
1.1
-55 to 150
70
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Nov,09,2012
www.samhop.com.tw
1 page  
STF2455
Ver 1.0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
15
ID = 6.5 A
12
VGS = 2.5 V
3.1 V
9 3.7 V
4.0 V
4.5 V
6
3
0
-50 0 50 100 150
Tch - Channel Temperature - °C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
100
Ciss
Coss
Crss
10
0.1
1 10 100
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
100 td(off) tr
tf td(on)
10
VDD = 20.0 V
VGS = 4.5 V
RG = 6 Ω
1
0.1
1
ID - Drain Current - A
10
DYNAMIC INPUT CHARACTERISTICS
4
VDD = 5 V
3
12 V
20 V
2
1
ID = 13 A
0
0 6 12 18 24
QG - Gate Charge -nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1
0.1
VGS = 0 V
0.01
0 0.3 0.6 0.9 1.2 1.5 1.8
VF(S-D) - Source to Drain Voltage - V
Nov,09,2012
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet STF2455.PDF ] | |
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