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PDF STF2459A Data sheet ( Hoja de datos )
| Número de pieza | STF2459A | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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STF2459AGreen
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
6.2 @ VGS=10V
7.5 @ VGS=4.5V
8.0 @ VGS=4.0V
24V 12A
8.6 @ VGS=3.7V
10.3 @ VGS=3.1V
16.3 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
G1
S1
S1
PIN 1
D1/D2
(Bottom view)
G2
S2
S2
TDFN 2X5
G1 3
S1 2
S1 1
Bottom Drain Contact
4 G2
5 S2
6 S2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous a c
-Pulsed c
TA=25°C
TA=70°C
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit
24
±16
12
9.6
58
1.67
1.07
-55 to 150
75
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Feb,18,2014
www.samhop.com.tw
1 page  
STF2459A
Ver 1.0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
ID = 6 A
16
VGS = 2.5 V
12 4.0 V 3.7 V 3.1 V
8 4.5 V
4
10 V
0
-50 0 50 100 150
Tch - Channel Temperature - °C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
100
Ciss
Coss
Crss
10
0.1
1 10 100
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
100
td(on)
tf tr
td(off)
10
VDD = 20.0 V
VGS = 10 V
RG = 6 Ω
1
0.1
1
ID - Drain Current - A
10
DYNAMIC INPUT CHARACTERISTICS
10
8 VDD = 5 V
12 V
6 20 V
4
2
ID = 12 A
0
0 10 20 30 40
QG - Gate Charge -nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 0 V
10
1
0.1
0.01
0
0.3 0.6 0.9 1.2 1.5 1.8
VF(S-D) - Source to Drain Voltage - V
Feb,18,2014
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet STF2459A.PDF ] | |
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