(PDF) SP8009 Datasheet - N-Channel Enhancement Mode Field Effect Transistor

Número de pieza	SP8009
Descripción	N-Channel Enhancement Mode Field Effect Transistor
Fabricantes	SamHop Microelectronics
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No Preview Available ! Green Product Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SP8009 Ver 1.1 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 6.0 @ VGS=10V 30V 24A 7.2 @ VGS=6V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. Pin 1 TSON 3.3 x 3.3 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous IDM -Pulsed a TA=25°C PD Maximum Power Dissipation TA=25°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient Limit 30 ±20 24 72 1.67 -55 to 150 75 Units V V A A W °C °C/W Details are subject to change without notice. 1 Jul,18,2013 www.samhop.com.tw 1 page SP8009 1000 100 rth - tw Mounted on FR-4 board 10 1 Single Pulse 0.1 0.001 0.01 0.1 1 10 Pulse width tw (S) Safe operating area 100 RDS(ON) Limit 10 1 t=100us t=1ms t=10ms t=1s DC VGS=10V 0.1 Single Pulse TA=25 C 0.1 1 10 Drain-source voltage VDS (V) 100 1000 Ver 1.1 Jul,18,2013 5 www.samhop.com.tw 5 Page

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PDF SP8009 Data sheet ( Hoja de datos )