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PDF SP8009E Data sheet ( Hoja de datos )
| Número de pieza | SP8009E | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SP8009E (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Green
Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SP8009E
Ver 1.5
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
5.0 @ VGS=10V
33V 24A
6.5 @ VGS=6V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
Pin 1
TSON 3.3 x 3.3
D5
D6
D7
D8
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous
IDM -Pulsed a
TA=25°C
PD
Maximum Power Dissipation
TA=25°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
4G
3S
2S
1S
Limit
33
±20
24
72
1.67
-55 to 150
75
Units
V
V
A
A
W
°C
°C/W
Details are subject to change without notice.
1
Oct,22,2013
www.samhop.com.tw
1 page  
SP8009E
1000
100
rth - tw
Mounted on FR-4 board
10
1
Single Pulse
0.1
0.001
0.01
0.1 1
10
Pulse width tw (S)
Safe operating area
100 RDS(ON) Limit
10
1
t=100us
t=1ms
t=10ms
t=1s
DC
VGS=10V
0.1 Single Pulse
TA=25 C
0.1 1
10
Drain-source voltage VDS (V)
100 1000
Ver 1.5
Oct,22,2013
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SP8009E.PDF ] | |
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