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PDF SP8601 Data sheet ( Hoja de datos )
| Número de pieza | SP8601 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SP8601 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Green
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SP8601
Ver 2.5
PRODUCT SUMMARY
VDSS
20V
ID
7.2A
RDS(ON) (mΩ) Max
17.5 @ VGS=4.5V
18.5 @ VGS=4.0V
20.0 @ VGS=3.7V
24.5 @ VGS=3.1V
27.0 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
D1 D1 D2 D2
S mini 8
PIN 1
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous c
-Pulsed a c
TA=25°C
TA=70°C
PD
Maximum Power Dissipation
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit
20
±12
7.2
5.8
43
1.47
0.94
-55 to 150
85
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Jul,18,2014
www.samhop.com.tw
1 page  
SP8601
Ver 2.5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
ID = 1.8 A
VGS = 2.5 V
40 3.1 V
3.7 V
4.0 V
30 4.5 V
20
10
0
-50 0 50 100 150
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
100
tr
td(off)
td(on)
10
tf
VDD = 16 V
VGS = 4.0 V
RG = 6 Ω
1
0.1
1
ID - Drain Current - A
10
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1
0.1
VGS = 0 V
0.01
0 0.3 0.6 0.9 1.2 1.5 1.8
VF(S-D) - Source to Drain Voltage - V
5
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
Ciss
100
Coss
Crss
10
0.1
1 10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT CHARACTERISTICS
4
3 VDD = 4 V
10 V
16 V
2
1
ID = 7.2 A
0
0 2 4 6 8 10
QG - Gate Charge -nC
Jul,18,2014
www.samhop.com.tw
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SP8601.PDF ] | |
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