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PDF SP8651 Data sheet ( Hoja de datos )
| Número de pieza | SP8651 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SP8651 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Green
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SP8651
Ver 3.7
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
14.0 @ VGS=4.5V
15.0 @ VGS=4.0V
24V 10A 16.0 @ VGS=3.7V
17.5 @ VGS=3.1V
21.0 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
S mini 8
PIN 1
D2 5
D2 6
D1 7
D1 8
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous a d
-Pulsed d
TA=25°C
TA=70°C
EAS Single Pulse Avalanche Energy c
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
4 G2
3 S2
2 G1
1 S1
Limit
24
±12
10
8
60
56
1.32
0.84
-55 to 150
95
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
May,29,2014
www.samhop.com.tw
1 page  
SP8651
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
30
25
VGS = 2.5 V
3.1 V
3.7 V
20 4.0 V
4.5 V
ID = 5A
15
10
5
0
-50 0 50 100 150
Tch - Channel Temperature - °C
DYNAMIC INPUT CHARACTERISTICS
4
VDD = 5 V
3 12 V
20 V
2
1
ID = 10 A
0
0 3 6 9 12 15
QG - Gate Charge -nC
Ver 3.7
1000
100
SWITCHING CHARACTERISTICS
VDD = 20.0 V
VGS = 4.5 V
RG = 6 Ω
td(off)
tf
tr
td(on)
10
0.1 1 10
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1
0.1
VGS = 0 V
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF(S-D) - Source to Drain Voltage - V
May,29,2014
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SP8651.PDF ] | |
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