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Numéro de référence | SP2106 | ||
Description | Dual N-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | SamHop Microelectronics | ||
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1 Page
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Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SP2106
Ver 1.1
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Max
100V
1A
2.0 @ VGS=10V
2.4 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
PDFN 5x6
PIN1
D2 5
D2 6
D1 7
D1 8
4 G2
3 S2
2 G1
1 S1
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TA=25°C
TA=70°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit
100
±20
1
0.8
4.1
0.25
2.5
1.6
-55 to 150
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Jul,18,2013
www.samhop.com.tw
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Pages | Pages 7 | ||
Télécharger | [ SP2106 ] |
No | Description détaillée | Fabricant |
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