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PDF SP3900 Data sheet ( Hoja de datos )
| Número de pieza | SP3900 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SP3900 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Green
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SP3900
Ver 1.1
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
42 @ VGS=10V
30V 4.5A
74 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
D1 D1 D2 D2
DFN 3x3
PIN1
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TA=25°C
TA=70°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit
30
±20
4.5
3.6
30
16
1.47
0.94
-55 to 150
85
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Jan,23,2014
www.samhop.com.tw
1 page  
SP3900
Ver 1.1
V DS
L
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VDD
Unclamped Inductive Test Circuit
F igure 13a.
V( BR )D S S
tp
IAS
Unclamped Inductive Waveforms
F igure 13b.
10
1
0.1
0.01
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
P DM
t1
t2
1. R ɞJA (t)=r (t) * R ɞJA
2. R ɞJA=S ee Datas heet
3. T J M-T A = P DM* R ɞJ A (t)
4. Duty C ycle, D=t1/t2
10 100 1000
Jan,23,2014
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SP3900.PDF ] | |
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