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PDF STS2301A Data sheet ( Hoja de datos )
| Número de pieza | STS2301A | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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STS2301AGreen
Product
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
Ver 1.1
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
-20V
-2.6A
95 @ VGS=-4.5V
130 @ VGS=-2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
S OT23-3L
D
S
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TC=25°C
TC=70°C
IDM -Pulsed b
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
-20
±10
-2.6
-2.1
9.8
1.25
0.8
-55 to 150
100
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Dec,31,2010
www.samhop.com.tw
1 page  
STS2301A
Ver 1.1
10
1
0.5
0.2
0.1
0. 1 0.05
0.02
0.01
0.01
0.0000 1
Single Pulse
P DM
t1
t2
1. R thJA (t)=r (t) * R thJA
2. R thJA=S ee Datas heet
3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
0.000 1
0 .001
0.01 0. 1
1
Square Wave Pulse Duration(sec)
10
Figure 13. Normalized Thermal Transient Impedance Curve
10 0
1 00 0
Dec,31,2010
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet STS2301A.PDF ] | |
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