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Numéro de référence | STS2305A | ||
Description | P-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | SamHop Microelectronics | ||
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1 Page
STS2305AGreen
Product
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
Ver 1.1
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
-20V
-3.3A
70 @ VGS=-4.5V
100 @ VGS=-2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
S OT23-3L
D
S
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TC=25°C
TC=70°C
IDM -Pulsed b
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
-20
±10
-3.3
-2.6
-12.5
1.25
0.8
-55 to 150
100
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Jun,02,2010
www.samhop.com.tw
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Pages | Pages 7 | ||
Télécharger | [ STS2305A ] |
No | Description détaillée | Fabricant |
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