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SamHop Microelectronics - P-Channel Enhancement Mode Field Effect Transistor

Numéro de référence STS3417
Description P-Channel Enhancement Mode Field Effect Transistor
Fabricant SamHop Microelectronics 
Logo SamHop Microelectronics 





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STS3417 fiche technique
Gr
Pr
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
STS3417
Ver 1.0
PRODUCT SUMMARY
VDSS
-30V
ID RDS(ON) (mΩ) Max
96 @ VGS=-4.5V
100 @ VGS=-4.0V
-3A 103 @ VGS=-3.7V
111 @ VGS=-3.1V
123 @ VGS=-2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
S OT-23
D
S
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
IDM -Pulsed b
TA=25°C
PD
Maximum Power Dissipation a
TA=25°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
-30
±12
-3
-11
1.25
-55 to 150
100
Units
V
V
A
A
W
°C
°C/W
Details are subject to change without notice.
1
Aug,29,2012
www.samhop.com.tw

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