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PDF STS3401A Data sheet ( Hoja de datos )
| Número de pieza | STS3401A | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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STS3401AGre
Pro
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
-30V
-3.2A
79 @ VGS=-10V
127 @ VGS=-4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
S OT-23
D
S
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
TA=25°C
TA=70°C
IDM -Pulsed b
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
-30
±20
-3.2
-2.6
-12
1.25
0.8
-55 to 150
100
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Jun,29,2011
www.samhop.com.tw
1 page  
STS3401A
Ver 1.0
10
1
0.5
0.2
0. 1 0.1
0.05
0.02
0.01
0.01
0.0000 1
Single Pulse
0.000 1
0 .001
0.01
0. 1
1
P DM
t1
t2
1. R thJA (t)=r (t) * R thJA
2. R thJA=S ee Datas heet
3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
10 100
Square Wave Pulse Duration(sec)
Figure 13. Normalized Thermal Transient Impedance Curve
1 00 0
Jun,29,2011
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet STS3401A.PDF ] | |
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