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PDF STS4501 Data sheet ( Hoja de datos )
| Número de pieza | STS4501 | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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S T S 4501Green
Product
S amHop Microelectronics C orp.
Oct. 12,2007
P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID R DS (ON) ( m Ω ) Max
-40V -3.5A
65 @ VGS = -10V
85 @ VGS = -4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S OT-23 P ackage.
S OT-23
D
S
G
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
S ymbol
VDS
Limit
- 40
Unit
V
Gate-S ource Voltage
VGS 20 V
Drain C urrent-C ontinuous @ TJ=25 C
ID
-3.5 A
-P ulsed b
IDM - 14
A
Drain-S ource Diode Forward C urrent
IS
-1.25 A
Maximum P ower Dissipation a
PD 1.25 W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R JA
100
C /W
1
1 page  
S TS 4501
900
750
Ciss
600
450
300
150
Crss
0
05
Coss
10 15 20
25 30
-VDS, Drain-to Source Voltage (V)
Figure 10. Capacitance
400
100 TD(off)
60 Tr
Tf TD(on)
10
VDS=-20V,ID=-1A
1 VGS=-10V
1 6 10 60 100 300 600
Rg, Gate Resistance (Ω)
Figure 12.switching characteristics
10
10
VDS=-28V
8 ID=-3.5A
6
4
2
0
0 2 4 6 8 10 12 14 16
Qg, Total Gate Charge (nC)
20
10 R DS(ON) Limit
1
1s100m1s 0ms
DC
0.1 VGS =-10V
S ingle P ulse
0.03 Tc=25 C
0.1 1
10 30 50
-VDS, Drain-Source Voltage (V)
Figure 13. Maximum Safe
Operating Area
1
0.5
0.2
0.1
0. 1 0.05
0.02
0.01
0.01
0.0000 1
0.000 1
Single Pulse
0 .001
0.01
0. 1
1
Square Wave Puls e D uration(sec)
Normalized Therma l T ransient Impedanc e C urve
P DM
t1
t2
1. R thJA (t)=r (t) * R thJA
2. R thJA=S ee Datas heet
3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
10 100
1 00 0
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet STS4501.PDF ] | |
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