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PDF STS6601 Data sheet ( Hoja de datos )
| Número de pieza | STS6601 | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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Green
Product
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
STS6601
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
-60V
-3.2A
110 @ VGS=-10V
160 @ VGS=-4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
SOT-26 package.
S OT 26
Top View
D 16 D
D 25 D
G 34 S
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
IDM -Pulsed b
TA=25°C
TA=70°C
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
-60
±20
-3.2
-2.6
-12
2
1.28
-55 to 150
62.5
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Sep,30,2008
www.samhop.com.tw
1 page  
STS6601
Ver 1.0
V DD
RL
V IN
D VOUT
VG S
RGEN G
S
Figure 13. Switching Test Circuit
td(on)
VOUT
ton
tr
td(off)
90%
10% INVE R TE D
toff
tf
90%
10%
VIN
10%
90%
50% 50%
PULS E WIDTH
Figure 14. Switching Waveforms
10
1 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
0.00001
Single Pulse
P DM
t1
t2
1. RthJA (t)=r (t) * R th JA
2. RthJA=See Datasheet
3. TJM-TA = PDM* RthJA (t)
4. Duty Cycle, D=t1/t2
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
100
1000
Sep,30,2008
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet STS6601.PDF ] | |
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