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Numéro de référence | STF443 | ||
Description | P-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | SamHop Microelectronics | ||
Logo | |||
Green
Product
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
STF443
Ver 1.0
PRODUCT SUMMARY
VDSS
-20V
ID
-4.5A
RDS(ON) (mΩ) Max
47 @ VGS=-4.5V
48 @ VGS=-4.0V
50 @ VGS=-3.7V
56 @ VGS=-3.1V
64 @ VGS=-2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
PIN 1
D
D
G
D
D
S
TDFN 2X2
G
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a d
TA=25°C
TA=70°C
IDM -Pulsed b
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
D
S
Limit
-20
±10
-4.5
-3.6
-23
1.67
1.07
-55 to 150
75
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Apr,26,2013
www.samhop.com.tw
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Pages | Pages 6 | ||
Télécharger | [ STF443 ] |
No | Description détaillée | Fabricant |
STF443 | P-Channel Enhancement Mode Field Effect Transistor | SamHop Microelectronics |
STF445 | P-Channel Enhancement Mode Field Effect Transistor | SamHop |
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