|
|
PDF SP2013 Data sheet ( Hoja de datos )
| Número de pieza | SP2013 | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SP2013 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
Green
Product
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
SP2013
Ver 1.1
PRODUCT SUMMARY
VDSS
-20V
ID
-8.5A
RDS(ON) (mΩ) Max
20 @ VGS=-4.5V
21 @ VGS=-4.0V
22 @ VGS=-3.7V
25 @ VGS=-3.1V
28 @ VGS=-2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
Pin 1
TSON 3.3 x 3.3
D5
D6
D7
D8
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a d
TA=25°C
TA=70°C
IDM -Pulsed b
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
4G
3S
2S
1S
Limit
-20
±12
-8.5
-6.8
-49
1.67
1.07
-55 to 150
75
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Jul,18,2013
www.samhop.com.tw
1 page  
SP2013
Ver 1.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
ID = -4.25 A
40
VGS = -2.5 V
-3.1 V
30 -3.7 V
-4.0 V
-4.5 V
20
10
0
-50 0 50 100 150
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
td(off)
100 tr
td(on)
tf
10
VDD = -16.0 V
VGS = -4.5 V
RG = 6 Ω
1
0.1
1
-ID - Drain Current - A
10
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1
0.1
VGS = 0 V
0.01
0 0.3 0.6 0.9 1.2 1.5 1.8
-VF(S-D) - Source to Drain Voltage - V
5
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
100
Ciss
Coss
Crss
10
0.1
1 10 100
-VDS - Drain to Source Voltage - V
DYNAMIC INPUT CHARACTERISTICS
4
VDD = -4 V
-10 V
3 -16 V
2
1
ID = -8.5 A
0
0 5 10 15 20 25
QG - Gate Charge -nC
Jul,18,2013
www.samhop.com.tw
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SP2013.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SP201 | SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |  Polyfet RF Devices |
| SP20100R | 20.0 Amp Schottky Barrier Rectifiers |  SeCoS |
| SP2013 | P-Channel Enhancement Mode Field Effect Transistor | SamHop |
| SP20150 | VOLTAGE 150V 20.0AMP Schottky Barrier Rectifiers | SeCoS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |