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STM8360T fiches techniques PDF

SamHop - Dual Enhancement Mode Field Effect Transistor

Numéro de référence STM8360T
Description Dual Enhancement Mode Field Effect Transistor
Fabricant SamHop 
Logo SamHop 





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STM8360T fiche technique
STM8360TGreen
Product
Sa mHop Microelectronics C orp.
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
Ver 1.0
PRODUCT SUMMARY (N-Channel)
VDSS
ID
RDS(ON) (m) Max
40V 6.6A
29 @ VGS=10V
45 @ VGS=4.5V
PRODUCT SUMMARY (P-Channel)
VDSS
ID
RDS(ON) (m) Max
-40V
-5.5A
42 @ VGS=-10V
65 @ VGS=-4.5V
S O-8
1
D2 5
D2 6
D1 7
D1 8
4 G2
3 S2
2 G1
1 S1
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
N-Channel P-Channel
VDS Drain-Source Voltage
VGS Gate-Source Voltage
40 -40
±20 ±20
ID
Drain Current-Continuous a
TC=25°C
TC=70°C
6.6 -5.5
5.3 -4.4
IDM -Pulsed b
33 -31
EAS Sigle Pulse Avalanche Energy d
16 19
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
2
1.28
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
62.5 °C/W
Details are subject to change without notice.
1
Nov,21,2008
www.samhop.com.tw

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