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Numéro de référence | STA6611 | ||
Description | Dual Enhancement Mode Field Effect Transistor | ||
Fabricant | SamHop | ||
Logo | |||
STA6611
SamHop Microelectronics Corp.
Nov. 22, 2006
Dual Enhancement Mode Field Effect Transistor ( N and P Channel)
PRODUCT SUMMARY (N-Channel)
VDSS
30V
ID RDS(ON) ( m Ω ) Max
23 @ VGS = 10V
7.6A
30 @ VGS = 4.5V
PRODUCT SUMMARY (P-Channel)
VDSS
-30V
ID
-6.6A
RDS(ON) ( m Ω ) Max
35 @ VGS = -10V
55 @ VGS = -4.5V
D1 D1 D2 D2
8765
P DIP -8
1
1234
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol N-Channel P-Channel
Drain-S ource Voltage
VDS 30 -30
Gate-S ource Voltage
a
Drain C urrent-C ontinuous @ Ta
-P ulsed b
25 C
70 C
VGS
ID
IDM
20 20
7.6 - 6.6
6 5.3
30 28
Drain-S ource Diode Forward C urrent a
IS 1.7 -1.7
Maximum P ower Dissipation a
Operating Junction and S torage
Temperature R ange
Ta= 25 C
Ta=70 C
PD
TJ, TSTG
3
2
-55 to 150
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a R JA
41.5
1
Unit
V
V
A
A
A
A
W
C
C /W
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Pages | Pages 10 | ||
Télécharger | [ STA6611 ] |
No | Description détaillée | Fabricant |
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