DataSheet.es    


PDF STB458D Data sheet ( Hoja de datos )

Número de pieza STB458D
Descripción Dual Enhancement Mode Field Effect Transistor
Fabricantes SamHop 
Logotipo SamHop Logotipo



Hay una vista previa y un enlace de descarga de STB458D (archivo pdf) en la parte inferior de esta página.


Total 11 Páginas

No Preview Available ! STB458D Hoja de datos, Descripción, Manual

STB458DGreen
Product
Sa mHop Microelectronics C orp.
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
Ver 1.0
PRODUCT SUMMARY (N-Channel)
VDSS
ID
40V 30A
RDS(ON) (m) Max
10.5 @ VGS=10V
14 @ VGS=4.5V
PRODUCT SUMMARY (P-Channel)
VDSS
ID
-40V
-24A
RDS(ON) (m) Max
17 @ VGS=-10V
24 @ VGS=-4.5V
D1/D2
S1
G1 D1/D2
S2
G2
STB SERIES
TO-263 5L
D1 D2
G1 G2
S 1 N-ch
S 2 P-ch
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
N-Channel P-Channel
VDS Drain-Source Voltage
VGS Gate-Source Voltage
40 -40
±20 ±20
ID
Drain Current-Continuous a
TC=25°C
TC=70°C
30 -24
23.7 -19
IDM -Pulsed b
68 -60
EAS Sigle Pulse Avalanche Energy d
170 210
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
15.6
10
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
8 °C/W
80 °C/W
Apr,23,2010
1 www.samhop.com.tw

1 page




STB458D pdf
STB458D
30
ID=15A
25
20
125 C
15
10 75 C
5
25 C
0
024
6 8 10
VGS, Gate-Source Voltage (V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
2400
2000
1600
Ciss
1200
800
Coss
400
Crss
0
05
10 15
20 25 30
VDS, Drain-to Source Voltage (V)
Figure 9. Capacitance
60
125 C
25 C
10
Ver 1.0
75 C
1
0 0.3 0.6 0.9 1.2 1.5
VSD, Body Diode Forward Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS =20V
8 ID=15A
6
4
2
0
0 4 8 12 16 20 24 28 32
Qg, Total Gate Charge (nC)
Figure 10. Gate Charge
300
100
10
TD(off )
Tf
TD(on)
Tr
VDS=20V,ID=1A
VGS=10V
1
1 10
Rg, Gate Resistance ()
100
Figure 11. Switching Characteristics
5
1000
100
R DS(ON) Limit
10
1
0.1
0.1
VGS=10V
Single Pulse
TA=25 C
1
10us
100us
1ms
DC
10 40
VDS, Gate-Source Voltage (V)
Figure 12. Maximum Safe
Operating Area
Apr,23,2010
www.samhop.com.tw

5 Page





STB458D arduino
STB458D
TO-263 Carrier Tape
Ver1.0
TO-263 Tape Data
unit:р
symbol
Spec
A0
10.80
²0.10
B0
16.13
²0.10
K0
5.21
²0.10
P0
4.00
²0.10
P1
16.0
²0.10
P2
2.00
²0.10
T
0.356
²0.13
E
1.75
²0.10
F
11.50
²0.10
D0
1.55
²0.05
D1
1.50
²0.25
W 10P0
24.0
+0.3
- 0.1
40.0
²0.20
Apr,23,2010
11 www.samhop.com.tw

11 Page







PáginasTotal 11 Páginas
PDF Descargar[ Datasheet STB458D.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
STB458DDual Enhancement Mode Field Effect TransistorSamHop
SamHop

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar