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Número de pieza | MT4JTF12864AZ | |
Descripción | DDR3 SDRAM UDIMM | |
Fabricantes | Micron Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MT4JTF12864AZ (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! 512MB, 1GB (x64, SR) 240-Pin DDR3 SDRAM UDIMM
Features
DDR3 SDRAM UDIMM
MT4JTF6464AZ – 512MB
MT4JTF12864AZ – 1GB
Features
• DDR3 functionality and operations supported as de-
fined in the component data sheet
• 240-pin, unbuffered dual in-line memory module
(UDIMM)
• Fast data transfer rates: PC3-12800, PC3-10600,
PC3-8500, or PC3-6400
• 512 (128 Meg x 64), 1GB (128 Meg x 64)
• VDD = VDDQ = +1.5V ±0.075V
• VDDSPD = +3.0V to +3.6V
• Reset pin for improved system stability
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Single rank
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Adjustable data-output drive strength
• Serial presence-detect (SPD) EEPROM
• Gold edge contacts
• Halogen-free
• Fly-by topology
• Terminated control, command, and address bus
Figure 1: 240-Pin UDIMM (MO-269 R/C C)
Module height: 30.0mm (1.181in)
Options
• Operating temperature 1
– Commercial (0°C ≤ TA ≤ +70°C)
• Package
– 240-pin DIMM (halogen-free)
• Frequency/CAS latency
– 1.25ns @ CL = 11 (DDR3-1600)
– 1.5ns @ CL = 9 (DDR3-1333)
– 1.87ns @ CL = 7 (DDR3-1066)
Marking
None
Z
-1G6
-1G4
-1G1
Note: 1. Contact Micron for industrial temperature
module offerings.
Table 1: Key Timing Parameters
Speed
Grade
-1G6
-1G4
-1G1
-1G0
-80C
-80B
Industry
Nomenclature
PC3-12800
PC3-10600
PC3-8500
PC3-8500
PC3-6400
PC3-6400
CL = 11 CL = 10
1600 1333
– 1333
––
––
––
––
Data Rate (MT/s)
CL = 9 CL = 8 CL = 7
1333 1066 1066
1333 1066 1066
– 1066 1066
– 1066 –
–––
–––
CL = 6
800
800
800
800
800
800
CL = 5
667
667
667
667
800
667
tRCD
(ns)
13.125
13.125
13.125
15
12.5
15
tRP
(ns)
13.125
13.125
13.125
15
12.5
15
tRC
(ns)
48.125
49.125
50.625
52.5
50
52.5
PDF: 09005aef83cad6ed
JTF4C64_128x64AZ.pdf – Rev. A 10/09
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
©2009 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
1 page 512MB, 1GB (x64, SR) 240-Pin DDR3 SDRAM UDIMM
Pin Assignments and Descriptions
Table 6: Pin Descriptions (Continued)
Symbol
VTT
NC
Type
Supply
–
Description
Termination voltage: Used for control, command, and address (VDD/2).
No connect: These pins are not connected on the module.
PDF: 09005aef83cad6ed
JTF4C64_128x64AZ.pdf – Rev. A 10/09
5 Micron Technology, Inc. reserves the right to change products or specifications without notice.
©2009 Micron Technology, Inc. All rights reserved.
5 Page 512MB, 1GB (x64, SR) 240-Pin DDR3 SDRAM UDIMM
Electrical Specifications
IDD Specifications
Table 11: DDR3 IDD Specifications and Conditions – 512MB
Values are for the MT41J64M16 DDR3 SDRAM only and are computed from values specified in the 1Gb (64 Meg x 16)
component data sheet
Parameter
Symbol 1600
1333
1066
Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE
Precharge power-down current: Slow exit
Precharge power-down current: Fast exit
Precharge quiet standby current
Precharge standby current
Precharge standby ODT current
Active power-down current
Active standby current
Burst read operating current
Burst write operating current
Refresh current
Self refresh temperature current: MAX TC = 85°C
Self refresh temperature current (SRT-enabled): MAX TC = 95°C
All banks interleaved read current
Reset current
IDD0
IDD1
IDD2P
IDD2P
IDD2Q
IDD2N
IDD2NT
IDD3P
IDD3N
IDD4R
IDD4W
IDD5B
IDD6
IDD6ET
IDD7
IDD8
480
680
48
180
268
280
460
180
260
1280
1720
1040
24
36
1840
56
440
600
48
160
240
260
420
160
240
1160
1420
960
24
36
1680
56
400
520
48
140
212
220
380
140
220
1040
1180
880
24
36
1520
56
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Table 12: DDR3 IDD Specifications and Conditions – 1GB
Values are for the MT41J128M16DDR3 SDRAM only and are computed from values specified in the 2Gb (128 Meg x 16)
component data sheet (Die Rev D)
Parameter
Symbol 1600
1333
1066
Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE
Precharge power-down current: Slow exit
Precharge power-down current: Fast exit
Precharge quiet standby current
Precharge standby current
Precharge standby ODT current
Active power-down current
Active standby current
Burst read operating current
Burst write operating current
Refresh current
Self refresh temperature current: MAX TC = 85°C
Self refresh temperature current (SRT-enabled): MAX TC = 95°C
IDD0
IDD1
IDD2P
IDD2P
IDD2Q
IDD2N
IDD2NT
IDD3P
IDD3N
IDD4R
IDD4W
IDD5B
IDD6
IDD6ET
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
480
600
48
140
260
260
400
180
300
1160
1340
1020
36
48
420
520
48
120
220
220
360
160
240
980
1120
980
36
48
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
PDF: 09005aef83cad6ed
JTF4C64_128x64AZ.pdf – Rev. A 10/09
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©2009 Micron Technology, Inc. All rights reserved.
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet MT4JTF12864AZ.PDF ] |
Número de pieza | Descripción | Fabricantes |
MT4JTF12864AZ | DDR3 SDRAM UDIMM | Micron Technology |
MT4JTF12864AZ-1G1 | DDR3 SDRAM UDIMM | Micron Technology |
MT4JTF12864AZ-1G4 | DDR3 SDRAM UDIMM | Micron Technology |
MT4JTF12864AZ-1G6 | DDR3 SDRAM UDIMM | Micron Technology |
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