PDF MT41J1G4 Data sheet ( Hoja de datos )

Número de pieza	MT41J1G4
Descripción	DDR3 SDRAM
Fabricantes	Micon
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No Preview Available ! 4Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J1G4 – 128 Meg x 4 x 8 banks MT41J512M8 – 64 Meg x 8 x 8 banks MT41J256M16 – 32 Meg x 16 x 8 banks Features • VDD = VDDQ = 1.5V ±0.075V • 1.5V center-terminated push/pull I/O • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Programmable CAS READ latency (CL) • Posted CAS additive latency (AL) • Programmable CAS WRITE latency (CWL) based on tCK • Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS]) • Selectable BC4 or BL8 on-the-fly (OTF) • Self refresh mode • TC of 0°C to 95°C – 64ms, 8192 cycle refresh at 0°C to 85°C – 32ms, 8192 cycle refresh at 85°C to 95°C • Self refresh temperature (SRT) • Write leveling • Multipurpose register • Output driver calibration Options1 • Configuration – 1 Gig x 4 – 512 Meg x 8 – 256 Meg x 16 • FBGA package (Pb-free) – x4, x8 – 78-ball (10.5mm x 12mm) Rev. D – 78-ball (9mm x 10.5mm) Rev. E, J • FBGA package (Pb-free) – x16 – 96-ball (10mm x 14mm) Rev. D – 96-ball (9mm x 14mm) Rev. E • Timing – cycle time – 938ps @ CL = 14 (DDR3-2133) – 1.071ns @ CL = 13 (DDR3-1866) – 1.25ns @ CL = 11 (DDR3-1600) – 1.5ns @ CL = 9 (DDR3-1333) – 1.87ns @ CL = 7 (DDR3-1066) • Operating temperature – Commercial (0°C ≤ TC ≤ +95°C) – Industrial (–40°C ≤ TC ≤ +95°C) • Revision Marking 1G4 512M8 256M16 RA RH RE HA -093 -107 -125 -15E -187E None IT :D/:E/:J Note: 1. Not all options listed can be combined to define an offered product. Use the part catalog search on http://www.micron.com for available offerings. Table 1: Key Timing Parameters Speed Grade -0931, 2, 3, 4 -1071, 2, 3 -1251, 2, -15E1, -187E Data Rate (MT/s) 2133 1866 1600 1333 1066 Target tRCD-tRP-CL 14-14-14 13-13-13 11-11-11 9-9-9 7-7-7 Notes: 1. Backward compatible to 1066, CL = 7 (-187E). 2. Backward compatible to 1333, CL = 9 (-15E). 3. Backward compatible to 1600, CL = 11 (-125). 4. Backward compatible to 1866, CL = 13 (-107). tRCD (ns) 13.09 13.91 13.75 13.5 13.1 tRP (ns) 13.09 13.91 13.75 13.5 13.1 CL (ns) 13.09 13.91 13.75 13.5 13.1 PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 1 page 4Gb: x4, x8, x16 DDR3 SDRAM Features ODT Off During READs .............................................................................................................................. 203 Asynchronous ODT Mode .............................................................................................................................. 205 Synchronous to Asynchronous ODT Mode Transition (Power-Down Entry) .................................................. 207 Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit) ........................................................ 209 Asynchronous to Synchronous ODT Mode Transition (Short CKE Pulse) ...................................................... 211 PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 5 Page State Diagram 4Gb: x4, x8, x16 DDR3 SDRAM State Diagram Figure 2: Simplified State Diagram Power applied Power on Reset procedure From any state RESET Initial- ization ZQCL MRS, MPR, write leveling MRS ZQ ZQCL/ZQCS calibration Idle SRE SRX REF CKE L Self refresh Refreshing Active power- down CKE L PDX PDE PDE ACT PDX Activating Precharge power- down CKE L WRITE Writing WRITE Bank active READ WRITE AP WRITE READ AP READ READ Reading WRITE AP Writing WRITE AP READ AP PRE, PREA PRE, PREA PRE, PREA READ AP Reading ACT = ACTIVATE MPR = Multipurpose register MRS = Mode register set PDE = Power-down entry PDX = Power-down exit PRE = PRECHARGE PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Precharging PREA = PRECHARGE ALL READ = RD, RDS4, RDS8 READ AP = RDAP, RDAPS4, RDAPS8 REF = REFRESH RESET = START RESET PROCEDURE SRE = Self refresh entry Automatic sequence Command sequence SRX = Self refresh exit WRITE = WR, WRS4, WRS8 WRITE AP = WRAP, WRAPS4, WRAPS8 ZQCL = ZQ LONG CALIBRATION ZQCS = ZQ SHORT CALIBRATION 11 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 11 Page

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