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PDF MT18KDF1G72PZ-1G4 Data sheet ( Hoja de datos )
| Número de pieza | MT18KDF1G72PZ-1G4 | |
| Descripción | 1.35V DDR3L SDRAM RDIMM | |
| Fabricantes | Micron Technology | |
| Logotipo |  |
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8GB (x72, ECC, SR) 240-Pin 1.35V DDR3L RDIMM
Features
1.35V DDR3L SDRAM RDIMM
MT18KDF1G72PZ – 8GB
Features
• DDR3L functionality and operations supported as
per the component data sheet
• 240-pin, registered dual in-line memory module
(RDIMM)
• Fast data transfer rates: PC3-12800, PC3-10600,
PC3-8500, or PC3-6400
• 8GB (1 Gig x 72)
• VDD = 1.35V (1.283–1.45V)
• VDD = 1.5V (1.425–1.575V)
• Backward compatible to VDD = 1.5V ±0.075V
• VDDSPD = 3.0–3.6V
• Supports ECC error detection and correction
• Nominal and dynamic on-die termination (ODT) for
data and strobe signals
• Single-rank
• On-board I2C temperature sensor with integrated
serial presence-detect (SPD) EEPROM
• 8 internal device banks
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Gold edge contacts
• Halogen-free
• Fly-by topology
• Terminated control, command, and address bus
Figure 1: 240-Pin RDIMM (MO-269 R/C M1)
Module height: 18.75mm (0.738in)
Options
• Operating temperature
– Commercial (0°C ≤ TA ≤ +70°C)
• Package
– 240-pin DIMM (halogen-free)
• Frequency/CAS latency
– 1.25ns @ CL = 11 (DDR3-1600)
– 1.5ns @ CL = 9 (DDR3-1333)
– 1.87ns @ CL = 7 (DDR3-1066)
Marking
None
Z
-1G6
-1G4
-1G1
Table 1: Key Timing Parameters
Speed
Grade
-1G6
-1G4
-1G1
-1G0
-80B
Industry
Nomenclature
PC3-12800
PC3-10600
PC3-8500
PC3-8500
PC3-6400
CL = 11 CL = 10
1600 1333
– 1333
––
––
––
Data Rate (MT/s)
CL = 9 CL = 8 CL = 7
1333 1066 1066
1333 1066 1066
– 1066 1066
– 1066 –
–––
CL = 6
800
800
800
800
800
CL = 5
667
667
667
667
667
tRCD
(ns)
13.125
13.125
13.125
15
15
tRP
(ns)
13.125
13.125
13.125
15
15
tRC
(ns)
48.125
49.125
50.625
52.5
52.5
PDF: 09005aef84b83d18
kdf18c1gx72pz.pdf - Rev. A 04/12 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
1 page  
8GB (x72, ECC, SR) 240-Pin 1.35V DDR3L RDIMM
Pin Descriptions
Table 5: Pin Descriptions (Continued)
Symbol
SDA
TDQSx,
TDQSx#
Err_Out#
EVENT#
VDD
VDDSPD
VREFCA
VREFDQ
VSS
VTT
NC
NF
Type
I/O
Output
Output
(open drain)
Output
(open drain)
Supply
Supply
Supply
Supply
Supply
Supply
–
–
Description
Serial data: Used to transfer addresses and data into and out of the temperature sen-
sor/SPD EEPROM on the I2C bus.
Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When TDQS is enabled, DM is
disabled and TDQS and TDQS# provide termination resistance; otherwise, TDQS# are
no function.
Parity error output: Parity error found on the command and address bus.
Temperature event: The EVENT# pin is asserted by the temperature sensor when crit-
ical temperature thresholds have been exceeded.
Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The
component VDD and VDDQ are connected to the module VDD.
Temperature sensor/SPD EEPROM power supply: 3.0–3.6V.
Reference voltage: Control, command, and address VDD/2.
Reference voltage: DQ, DM VDD/2.
Ground.
Termination voltage: Used for control, command, and address VDD/2.
No connect: These pins are not connected on the module.
No function: These pins are connected within the module, but provide no functional-
ity.
PDF: 09005aef84b83d18
kdf18c1gx72pz.pdf - Rev. A 04/12 EN
5 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
5 Page 
8GB (x72, ECC, SR) 240-Pin 1.35V DDR3L RDIMM
Electrical Specifications
Electrical Specifications
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in each device's data sheet is not implied. Exposure to ab-
solute maximum rating conditions for extended periods may adversely affect reliability.
Table 7: Absolute Maximum Ratings
Symbol
VDD
VIN, VOUT
Parameter
VDD supply voltage relative to VSS
Voltage on any pin relative to VSS
Min
–0.4
–0.4
Max
1.975
1.975
Units
V
V
Table 8: Operating Conditions
Symbol Parameter
VDD VDD supply voltage
VREFCA(DC) Input reference voltage command/
address bus
VREFDQ(DC) I/O reference voltage DQ bus
IVTT Termination reference current from
VTT
VTT Termination reference voltage (DC) –
command/address bus
II Input leakage current; Address in-
Any input 0V ≤ VIN ≤ puts, RAS#,
VDD; VREF input 0V ≤ VIN CAS#, WE#,
≤ 0.95V (All other pins S#, CKE, ODT,
not under test = 0V) BA, CK, CK#
IOZ Output leakage current; DQ, DQS,
0V ≤ VOUT ≤ VDD; DQ
DQS#
and ODT are disabled;
ODT is HIGH
IVREF
VREF supply leakage current;
VREFDQ = VDD/2 or VREFCA = VDD/2
(All other pins not under test = 0V)
TA Module ambient
operating temperature
TC DDR3 SDRAM component case operat-
ing temperature
Min
1.283
1.425
0.49 × VDD
0.49 × VDD
–600
0.49 × VDD - 20mV
TBD
–5
–18
0
0
Nom
1.35
1.5
0.5 × VDD
0.5 × VDD
–
0.5 × VDD
TBD
0
0
–
–
Max
1.45
1.575
0.51 × VDD
0.51 × VDD
600
Units
V
V
V
Notes
1
V
mA
0.51 × VDD + 20mV V
TBD µA
2
5 µA
18 µA
70 °C 3, 4
95 °C 3, 4, 5
Notes:
1. Module is backward-compatible with 1.5V operation. Refer to device specification for
details and operation guidance.
2. VTT termination voltage in excess of the stated limit will adversely affect the command
and address signals’ voltage margin and will reduce timing margins.
3. TA and TC are simultaneous requirements.
4. For further information, refer to technical note TN-00-08: “Thermal Applications,”
PDF: 09005aef84b83d18
kdf18c1gx72pz.pdf - Rev. A 04/12 EN
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet MT18KDF1G72PZ-1G4.PDF ] | |
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