DataSheetWiki


M2S1G64TUH8G4F fiches techniques PDF

Nanya - Unbuffered DDR2 SO-DIMM

Numéro de référence M2S1G64TUH8G4F
Description Unbuffered DDR2 SO-DIMM
Fabricant Nanya 
Logo Nanya 





1 Page

No Preview Available !





M2S1G64TUH8G4F fiche technique
M2N1G64TUH8G5F / M2S1G64TUH8G4F / M2N2G64TU8HG5B / M2N2G64TU8HG4B
1GB: 128M x 64 / 2GB: 256M x 64
PC2-5300 / PC2-6400
Unbuffered DDR2 SO-DIMM
Based on DDR2-667/800 64Mx16 (1GB)/128Mx8 (2GB) SDRAM G-Die
Features
Performance:
Speed Sort
PC2-5300 PC2-6400
-3C -AC Unit
DIMM CAS Latency
5
5
fck Clock Freqency
333
400 MHz
tck Clock Cycle 3 2.5 ns
Data Transfer Speed
667
800 Mbps
200-Pin Small Outline Dual In-Line Memory Module (SO-DIMM)
1GB: 128Mx64 Unbuffered DDR2 SO-DIMM based on 64M x16
DDR2 SDRAM G-Die devices.
2GB: 256Mx64 Unbuffered DDR2 SO-DIMM based on 128M x8
DDR2 SDRAM G-Die devices.
Intended for 333MHz and 400MHz applications
• Inputs and outputs are SSTL-18 compatible
VDD = VDDQ = 1.8V ±0.1V
• SDRAMs have 8 internal banks for concurrent operation
• Differential clock inputs
• Data is read or written on both clock edges
DRAM DLL aligns DQ and DQS transitions with clock transitions.
Address and control signals are fully synchronous to positive
clock edge
• Auto Refresh (CBR) and Self Refresh Modes
Automatic and controlled precharge commands
• Programmable Operation:
- DIMM  Latency: 3, 4, 5
- Burst Type: Sequential or Interleave
- Burst Length: 4, 8
- Operation: Burst Read and Write
• 13/10/2 Addressing (1GB)
• 14/10/2 Addressing (2GB)
7.8 s Max. Average Periodic Refresh Interval
• Serial Presence Detect
• Gold contacts
1GB modules SDRAMs are 84-ball BGA Package
2GB modules SDRAMs are 60-ball BGA Package
RoHS compliance
Description
M2N1G64TUH8G5F / M2S1G64TUH8G4F / M2N2G64TU8HG5B / M2N2G64TU8HG4B are unbuffered 200-Pin Double Data Rate 2
(DDR2) Synchronous DRAM Small Outline Dual In-Line Memory Module (SO-DIMM), organized as two ranks of 128Mx64 (1GB)/256Mx64
(2GB) high-speed memory array. M2N1G64TUH8G5F / M2S1G64TUH8G4F uses eight 64Mx16 84-ball BGA packaged devices and
M2N2G64TU8HG5B / M2N2G64TU8HG4B uses sixteen 128Mx8 60-ball BGA packaged devices. These DIMMs are manufactured using
raw cards developed for broad industry use as reference designs. The use of these common design files minimizes electrical variation
between suppliers. All Elixir DDR2 SODIMMs provide a high-performance, flexible 8-byte interface in a space-saving footprint.
The DIMM is intended for use in applications operating of 333MHz/400MHz clock speeds and achieves high-speed data transfer speed of
667Mbps/800Mbps. Prior to any access operation, the device  latency and burst/length/operation type must be programmed into the
DIMM by address inputs A0-A12 (1GB) / A0-A13 (2GB) and I/O inputs BA0, BA1 and BA2 using the mode register set cycle.
The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of SPD data are
programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.
REV 1.0
07/2010
1
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.

PagesPages 19
Télécharger [ M2S1G64TUH8G4F ]


Fiche technique recommandé

No Description détaillée Fabricant
M2S1G64TUH8G4F Unbuffered DDR2 SO-DIMM Nanya
Nanya

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche