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Numéro de référence | KP1500A | ||
Description | HIGH POWER THYRISTOR | ||
Fabricant | ETC | ||
Logo | |||
KP1500A/4000V
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HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS
Features:
. All Diffused Structure
. Spoke Amplifying Gate Configuration
. High dV/dt Capability
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
CASE 5T
Blocking - Off State
Device Type VRRM (1) VDRM (1) VRSM (1)
KP1500A 4000
4000
4400
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse
leakage and off state leakage
Critical rate of voltage rise
IRRM / IDRM
dV/dt (4)
10 mA
200 mA (3)
1000 V/µsec
Conducting - on state
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 70% rated VDRM. Gate open.
Tj = 125 oC.
(5) Non-repetitive value.
Parameter
Average value of on-state current
RMS value of on-state current
Peak one cpstcle surge
(non repetitive) current
I square t
Latching current
Holding current
Peak on-state voltage
Critical rate of rise of on-state
current (5)
Critical rate of rise of on-state
current
Symbol Min.
IT(AV)
ITRMS
ITSM
I2t
IL
IH
VTM
di/dt
di/dt
Max. Typ.
1500
2200
40000
36000
4x106
1500
250
2.40
300
100
Units
A
A
Conditions
Sinewave,180o conduction,Tc=70oC
Nominal value
A 8.3 msec (60Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
A 10.0 msec (50Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
A2s 8.3 msec and 10.0 msec
mA VD = 24 V; RL= 12 ohms
mA VD = 24 V; I = 2.5 A
V
A/µs
A/µs
ITM = 5000 A
Switching from VDRM ≤ 800 V,
non-repetitive
Switching from VDRM ≤ 800 V
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Pages | Pages 2 | ||
Télécharger | [ KP1500A ] |
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